p age:p2-p1 plastic-encapsulate transistors features complementary to a733 marking : cr maximum ratings (ta=25 unless otherwise noted) parameter symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current -continuous i c 150 ma collector power dissipation p c 0.4 w junction temperature t j 150 storage temperature t stg -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =1ma , i e =0 60 v collector-emitter breakdown voltage v ceo i c =100ua , i b =0 50 v emitter-base breakdown voltage v ebo i e =100ma, i c =0 5 v collector cut-off current i cb o v cb =60v, i e =0 0.1 ua collector cut-off current i ce o v ce =45v 0.1 ua emitter cut-off current i eb o v eb =5v , i c =0 0.1 ua dc current gain h fe(1) v ce =6 v , i c =1ma 70 700 h fe(2) v ce =6 v , i c =0.1ma 40 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma 0.3 v base-emitter saturation voltage v be(sat) i c =100ma, i b =10ma 1 v transition frequency f t v ce =6v,i c =10ma,f =30 mhz 200 mhz collector output capacitance cob v cb =10v,i e =0,f=1mh z 3.0 pf noise figure nf vce=6v,ic=0.1ma rg=10k ? ,f=1kmhz 10 db classification of h fe rank o y gr bl range 70-140 120-240 200-400 350-700 (npn) 1. base 2. emitter sot-23 3. collecto C945 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
p age:p2-p2 plastic-encapsulate transistors typical characteristics C945 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
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